Fin structures and methods of fabricating fin structures

ABSTRACT

There is provided fin structures and methods for fabricating fin structures. More specifically, fin structures are formed in a substrate. The fin structures may include two fins separated by a channel, wherein the fins may be employed as fins of a field effect transistor. The fin structures are formed below the upper surface of the substrate, and may be formed without utilizing a photolithographic mask to etch the fins.

CROSS-REFERENCE TO RELATED APPLICATION

This application is a continuation of U.S. patent application Ser. No.11/508,047, filed on Aug. 22, 2006.

BACKGROUND OF THE INVENTION

1. Field of the Invention

Embodiments of the invention relate relates generally to electronicdevices, and, more specifically, to fin field effect transistors(“FETs”) and processes for fabricating the same.

2. Description of the Related Art

This section is intended to introduce the reader to various aspects ofart that may be related to various aspects of the present invention,which are described and/or claimed below. This discussion is believed tobe helpful in providing the reader with background information tofacilitate a better understanding of the various aspects of the presentinvention. Accordingly, it should be understood that these statementsare to be read in this light, and not as admissions of prior art.

Integrated circuits can be found in virtually any electronic device. Forexample, integrated circuits, such as microprocessors and digital memorychips, are present in products such as computers, cell phones, andmicrowave ovens. Since their first introduction over a half century ago,integrated circuits have progressively become smaller and increasinglymore densely populated. The increase in density provides numerousadvantages, including the ability for smaller chips to perform the samefunctionality as larger chips. Additionally, the smaller size increasesperformance while reducing power consumption. Specifically, with smallersize, the electrical paths are shorter, allowing lower power logic to beused at fast switching speeds. However, achieving progressively smallerstructure size on the chips, and, thus, producing smaller chips, hasbecome increasingly difficult and costly due, at least in part, toreaching physical limitations of standard fabrication techniques. Assuch, new and improved processes are constantly being proposed tofurther reduce cost as well as size.

Typically, the integrated circuit manufacturing process includes atleast three main processes: 1) patterning; 2) adding materials; and 3)removing materials. The patterning process is primarily achieved byemploying a photolithographic mask or other form of mask. Through thepatterning process, various regions are defined that eventually serve asthe components, such as transistors and traces, of the integratedcircuit. The process of adding materials includes depositing or growingmaterial on a substrate to create multiple layers. The process ofremoving materials generally includes an etching process. It is throughthe etching process that material in regions defined by the mask isremoved to form various structures.

A fin field effect transistor (“fin FET”) is a type of metal oxidesemiconductor FET (“MOSFET”) that is built around a fin (e.g., a tall,thin semiconductive member) extending generally perpendicularly from asubstrate. Typically, a gate traverses the fin by conformally running upone side of the fin over the top and down the other side of the fin.Generally, a source and a drain are located on opposite sides of thegate in the fin. In operation, a current through the fin between thesource and drain is controlled by selectively energizing the gate.

Advantageously, fin FETs may have significantly faster switching timesand higher current density than conventional complementary metal oxidesemiconductor (“CMOS”) transistors. In addition, those of ordinary skillin the art will appreciate that fin FETs also typically offer greatercontrol over channel voltages and resistance to short-channel effects.Disadvantageously, the number of iterative steps employed to fabricate afin FET may exceed those of conventional CMOS processes, and inintegrated circuit manufacturing, the number of iterative steps in thefabrication process typically correlates directly with the cost ofproduction. As such, reducing the number of steps employed infabricating a fin FET would be desirable.

BRIEF DESCRIPTION OF THE DRAWINGS

Advantages of the invention may become apparent upon reading thefollowing detailed description and upon reference to the drawings, inwhich:

FIG. 1 illustrates a block diagram of a processor-based system inaccordance with an embodiment of the present technique;

FIG. 2 illustrates a memory sub-system in accordance with an embodimentof the present technique;

FIG. 3 illustrates a memory module in accordance with an embodiment ofthe present technique;

FIG. 4 illustrates a flow chart depicting a manufacturing process inaccordance with an embodiment of the present technique.

FIG. 5 illustrates a flow chart depicting a technique for active areapreparation and spacer formation in accordance with an embodiment of thepresent technique; and

FIGS. 6-14 are views further illustrating the manufacturing process ofFIGS. 4 and 5 in accordance with the embodiment of the presenttechnique.

DETAILED DESCRIPTION OF SPECIFIC EMBODIMENTS

One or more specific embodiments of the present invention will bedescribed below. In an effort to provide a concise description of theseembodiments, not all features of an actual implementation are describedin the specification. It should be appreciated that in the developmentof any such actual implementation, as in any engineering or designproject, numerous implementation-specific decisions must be made toachieve the developers' specific goals, such as compliance withsystem-related and business-related constraints, which may vary from oneimplementation to another. Moreover, it should be appreciated that sucha development effort might be complex and time consuming but wouldnevertheless be a routine undertaking of design, fabrication, andmanufacture for those of ordinary skill having the benefit of thisdisclosure.

Some of the subsequently discussed embodiments may facilitate themanufacture of fin field effect transistors (“FETs”). As is described indetail below, in accordance with one embodiment, there is provided amethod of fabricating a transistor comprising a fin and a gate, themethod comprising performing a first etch to create a first wall of thefin, wherein a location of the etch is not defined by aphotolithographic mask, performing a second etch to create a second wallof the fin, and depositing a gate adjacent to the fin, wherein the gateis deposited after the second etch. As such, the following discussiondescribes devices and process flows in accordance with embodiments ofthe present processes. Prior to addressing these embodiments from thedevice and process flow perspective, exemplary systems in accordancewith embodiments of the present technique are described.

Turning to the figures, FIG. 1 depicts one embodiment of aprocessor-based system, generally designated by a reference numeral 10.As is explained below, the system 10 may include various electronicdevices manufactured in accordance with embodiments of the presenttechnique. The system 10 may be any of a variety of types such as acomputer, pager, cellular phone, personal organizer, control circuit,and so forth. In a typical processor-based system, one or moreprocessors 12, such as a microprocessor, control the processing ofsystem functions and requests in the system 10. The processor 12 andother subcomponents of the system 10 may include structures manufacturedin accordance with embodiments of the present technique, as issubsequently explained.

The system 10 typically includes a power supply 14. For instance, if thesystem 10 is a portable system, the power supply 14 may advantageouslyinclude a fuel cell, permanent batteries, replaceable batteries, and/orrechargeable batteries. The power supply 14 may also include an ACadapter, so the system 10 may be plugged into a wall outlet, forinstance. The power supply 14 may also include a DC adapter such thatthe system 10 may be plugged into a vehicle cigarette lighter, forinstance.

Various other devices may be coupled to the processor 12 depending onthe functions that the system 10 performs. For instance, a userinterface 16 may be coupled to the processor 12. The user interface 16may include buttons, switches, a keyboard, a light pen, a mouse, adigitizer and stylus, and/or a voice recognition system, for instance. Adisplay 18 may also be coupled to the processor 12. The display 18 mayinclude an LCD, an SED display, a CRT display, a DLP display, a plasmadisplay, an OLED display, LEDs, and/or an audio display, for example.Furthermore, an RF sub-system/baseband processor 20 may also be coupledto the processor 12. The RF sub-system/baseband processor 20 may includean antenna that is coupled to an RF receiver and to an RF transmitter(not shown). One or more communication ports 22 may also be coupled tothe processor 12. The communication port 22 may be adapted to be coupledto one or more peripheral devices 24 such as a modem, a printer, acomputer, or to a network, such as a local area network, remote areanetwork, intranet, or the Internet, for instance.

The processor 12 generally controls the system 10 by implementingsoftware programs stored in the memory. The memory is operably coupledto the processor 12 to store and facilitate execution of variousprograms. For instance, the processor 12 may be coupled to the volatilememory 26 which may include Dynamic Random Access Memory (“DRAM”) and/orStatic Random Access Memory (“SRAM”). The volatile memory 26 istypically large so that it can store dynamically loaded applications anddata. As described further below, the volatile memory 26 may beconfigured in accordance with embodiments of the present invention.

The processor 12 may also be coupled to non-volatile memory 28. Thenon-volatile memory 28 may include a read-only memory (“ROM”), such asan EPROM, and/or flash memory to be used in conjunction with thevolatile memory 26. The size of the ROM is typically selected to be justlarge enough to store any necessary operating system, applicationprograms, and fixed data. Additionally, the non-volatile memory 28 mayinclude a high capacity memory such as a tape or disk drive memory. Asis explained in greater detail below, the non-volatile memory 28, asanother example, may also include electronic devices manufactured inaccordance with embodiments of the present technique.

FIG. 2 generally illustrates a block diagram of one embodiment of aportion of a memory sub-system, such as the volatile memory 26. A memorycontroller 30 is generally provided to facilitate access to storagedevices in the volatile memory 26. The memory controller 30 may receiverequests to access the storage devices via one or more processors, suchas the processor 12, via peripheral devices, such as the peripheraldevice 24, and/or via other systems (not shown). The memory controller30 is generally tasked with facilitating the execution of the requeststo the memory devices and coordinating the exchange of information,including configuration information, to and from the memory devices.

The memory sub-system may include a plurality of slots 32-46. Each slot32-46 is configured to operably couple a memory module, such as adual-inline memory module (“DIMM”), to the memory controller 30 via oneor more memory buses. Each DIMM generally includes a plurality of memorydevices such as DRAM devices capable of storing data, as describedfurther below with reference to FIG. 3. As described further below, eachDIMM has a number of memory devices on each side of the module. Eachside of the module may be referred to as a “rank.” Accordingly, eachexemplary slot 32-46 is configured to receive a single DIMM having tworanks. For instance, the slot 32 is configured to receive a DIMM havingranks 32A and 32B, the slot 34 is configured to receive a DIMM havingranks 34A and 34B, and so forth. In the present exemplary embodiment,each of the eight memory slots 32-46 is capable of supporting a modulecomprising eight individual memory devices on each rank 32A/B-46A/B, asbest illustrated with respect to FIG. 3, described further below.

Referring again to FIG. 2, the memory buses may include a memory databus 48 to facilitate the exchange of data between each memory device onthe DIMMs and the memory controller 30. The memory data bus 48 comprisesa plurality of single bit data buses, or transmission lines, eachcoupled from the memory controller 30 to a memory device. In oneembodiment of the volatile memory 26, the memory data bus 48 may include64 individual data buses. Further, the memory data bus 48 may includeone or more individual buses to each memory rank 32A/B-46A/B which maybe used for ECC error detection and correction. As can be appreciated bythose skilled in the art, the individual buses of the memory data bus 48will vary depending on the configuration and capabilities of the system10.

The volatile memory 26 also includes a command bus 50 on which addressinformation such as command address (CA), row address select (RAS#),column address select (CAS#), write enable (WE#), bank address (BA),chip select (CS#), clock enable (CKE), and on-die termination (ODT), forexample, may be delivered for a corresponding request. Further, thecommand bus 50 may also be used to facilitate the exchange ofconfiguration information at boot-up. As with the memory data bus 48,the command bus 50 may comprise a plurality of individual command buses.In the present embodiment, the command bus 50 may include 20 individualbuses. As previously described with reference to the memory data bus 48,a variety of embodiments may be implemented for the command bus 50depending on the system configuration.

FIG. 3 illustrates one embodiment of a memory module 52, such as a DIMM,that may be inserted into one of the memory slots 32-46 (FIG. 2). In thepresent exemplary view, one side of the memory module 52 is illustrated,and generally designated as the rank 52A. As previously discussed, thememory module 52 may include two ranks 52A and 52B. The rank 52Aincludes a plurality of memory devices 56A-56H, such as dynamic randomaccess memory (DRAM) devices, which may be used for storing information.As will be appreciated, the second opposing side of the memory module 52(52B, not shown) also includes a number of memory devices. The memorymodule 52 may include an edge connector 54 to facilitate mechanicalcoupling of the memory module 52 into one of the memory slots 32-46.Further, the edge connector 54 provides a mechanism for electricalcoupling to facilitate the exchange of data and control signals from thememory controller 30 to the memory devices 56A-56H (and the memorydevices on the second ranks). The embodiment of FIG. 3 may be employedin accordance with various standards. For instance, the memory module 52may be employed in a single data rate (SDR), fully buffered (FB)-DIMM,double data rate (DDR), and double data rate 2 (DDR2) system 10.

The memory devices 56A-56H may each include an array of cells (notshown) that each include a transistor and a capacitor or some othermemory element. In certain embodiments, at least a portion of the cellsmay be manufactured in accordance with embodiments of the presenttechniques. For example, one or more cells may include a fin FET and amemory element, such as a capacitor.

Accordingly, FIG. 4 is a flowchart illustrating one embodiment of amanufacturing process 100 that may be used to manufacture a fin FET inaccordance with embodiments of the present technique. As illustrated inFIG. 4, the exemplary manufacturing process 100 may begin with activearea preparation and spacer formation, as indicated by blocks 102 and104 of FIG. 4. As described above, FIG. 4 is a flowchart illustrating anoverview of one embodiment of a manufacturing process. FIG. 5 is aflowchart illustrating additional detail relating to blocks 102 and 104from FIG. 4 which will be described initially below. In addition, blocks102 and 104 of FIG. 5 are also be described in combination with FIGS.6A, 6B, and 7, which depict perspective view of a semiconductorstructure during the manufacturing process described in relation toFIGS. 4 and 5.

Accordingly, as indicated by block 130 of FIG. 5 and illustrated inFIGS. 6A and 6B, active area preparation may begin by providing thesubstrate 160. As will be appreciated, the substrate 160 may form thefoundation of a semiconductor structure. The substrate 160 may includesemiconductive materials such as single crystalline or poly crystallinesilicon, gallium arsenide, indium phosphide, or other materials withsemiconductor properties. Alternately or additionally, the substrate 160may include a non-semiconductor surface on which an electronic devicemay be constructed such as a plastic or ceramic work surface, forexample. The substrate 160 may be in the form of a whole wafer, aportion of a diced wafer, or a portion of a diced wafer in a packagedelectronic device, for instance.

The technique for active area preparation 102 may then continue withgrowing and/or otherwise creating a pad oxide layer (“PADOX”) 162 on topof and/or adjacent to the substrate 160, as indicated by block 132. Asthose of ordinary skill in the art will appreciate, the PADOX 162typically includes a thin, thermally grown oxide that is employed toseparate adjacent layers during fabrication of a semiconductor. In oneembodiment, the PADOX 162 will be approximately 50 angstroms (“A”)thick.

Next, the technique for active area preparation 102 may includedepositing a nitride layer 164 on top of and/or adjacent to the PADOX162, as indicated by block 134. In one embodiment, the nitride layer 164may include a layer of silicon nitride with a thickness betweenapproximately 500 and 700 A. However, in other embodiments, othersuitable types of nitrides and/or other suitable layer thicknesses maybe employed in the technique 102. For example, in one embodiment, thenitride layer 164 may include a 100A-200A thick section of additionalnitride that is deposited to account for the STI etch described below.For the purposes of the present application, it will be appreciated thata “deposited” layer should be construed as being placed above but notnecessarily resting on an underlying layer (i.e., there may beintervening layers between the deposited layer and the underlyinglayer); whereas a layer “deposited directly on top of” an underlyingshould be construed as resting directly on top of the underlying layer.

Next, the technique 102 may include applying a photolithographic mask(not shown in FIG. 6A, 6B, or 7) on top of and/or adjacent to thenitride layer 164, as indicated by block 136. In one embodiment, thephotolithographic mask may define a plurality of walls 166, theformation of which are described further below. In one embodiment, aphotolithographic mask may define the walls 166 with a width ofapproximately 200 or less and a length of approximately 1500 or more.After the photolithographic mask has been applied, the technique 102 mayinvolve etching the nitride layer 164 and the PADOX 162 to form thewalls 166, as indicated by block 138. In one embodiment, etching thenitride layer and the PADOX 162 may include performing an insitu etch,such as active ion etching or other suitable form of anisotropic etch.Alternatively, other suitable forms of wet and dry etching may beemployed. Additionally, in some embodiments, the technique 102 may alsoinclude etching through some portion of the substrate 160 in conjunctionwith etching the nitride layer 164 and the PADOX 162. For example, inone embodiment, the technique 102 may include etching approximately 200Afrom the substrate 160 in the areas that are not below the walls 166.After the etching has been completed, the technique 102 may includeremoving the photolithography mask, as indicated by block 140. Oneembodiment of the semiconductor structure formed after block 140 isillustrated in FIG. 6.

Turning next to the spacer formation technique 104, this technique maybegin by depositing a spacer layer on top and/or adjacent to the nitridelayer 164 and the substrate 160, as indicated by block 142. In oneembodiment, depositing the spacer layer may include depositing a layerof Tetraethyl Orthosilicate (“TEOS”) at a thickness of approximately300A. This TEOS layer may be deposited using an Atomic Layer ChemicalDeposition. However, in other embodiments, alternate processes may beemployed to deposit the TEOS layer. For example, in other embodiments, aPlasma Enhanced Chemical Vapor Deposition or other suitable ChemicalVapor Deposition process may be employed. Moreover, in still otherembodiments, other suitable spacer materials and/or layer thicknessesmay be employed in the technique 104. After depositing the spacer layer,the technique 104 may involve etching the spacer layer to form spacer170, as indicated by block 144 and illustrated in FIG. 7. In variousembodiments, etching the spacer layer may include performing a stop onsilicon etch, performing an insitu TEOS silicon etch, or performinganother suitable type of etch.

Returning to FIG. 4 in conjunction with FIG. 8, after the spacers 170have been formed, the technique 100 may proceed with a shallow trenchisolation (“STI”) etch, as indicated by block 106. In one embodiment,the STI etch may include etching approximately 2,000 to 3,000 A into thesubstrate 160 to create one or more trenches 171. However, in alternateembodiments the STI etch may include etching to another suitable depthinto the substrate 160. As will be appreciated, during the STI etch, thenitride layer 164 and the spacer 170 may function as the hard mask toprotect those areas of the substrate 160 covered by the nitride layer164 and the spacer 170 from the STI etching. FIG. 8 illustrates oneembodiments of a semiconductor structure after the completion of the STIetch. In addition, although the STI etch (block 106) and the spacerlayer etch (block 144) are illustrated in FIGS. 4 and 5 as two separateblocks, in one embodiment, these two etches may be performed together.

Next, the technique 100 may include performing an STI fill and chemicalmechanical polish (“CMP”) on the semiconductor structure, as indicatedby block 108 of FIG. 4 and illustrated in the structure of FIG. 9. Inone embodiment, the STI fill may include filling the areas etched out bythe STI etch with a spin on dielectric (“SOD”) 172 (See FIG. 9). Inother embodiments, however, other suitable types of dielectric may beused to fill the areas removed by the STI etch 106. As also indicated byblock 108, after the SOD fill has been applied, the technique 100 mayalso include performing a CMP on the semiconductor structure. In oneembodiment, the CMP may include a stop on nitride (“SON”) CMP that willpolish the SOD fill 172 until the top of the SOD fill 172 is roughlyflush with the top of the nitride layer 164. In other words, the top ofthe semiconductor structure may be polished until the polisher in theCMP device reaches the nitride layer 164. FIG. 9 illustrates oneembodiment of a semiconductor structure following the STI fill and CMP.

Next, the technique 100 may include etch leveling and a nitride strip,as indicated by block 110. In one embodiment, etch leveling may includea buffer oxide etch using a mixture of ammonia, fluoride, andhydrofluoric acid. In alternate embodiments, however, other suitabletypes of etch leveling may be employed. Similarly, in one embodiment,the nitride strip illustrated in block 110 may include a wet nitridestrip employing boiling phosphoric acid, but in alternate embodiments,other suitable types of wet nitride strip may be employed in thetechnique 100. FIG. 10 illustrates an exemplary semiconductor structurefollowing the etch leveling and nitride strip (block 110). Asillustrated, the etch leveling and nitride strip removed the nitridelayer 164 and removed the section of the spacers 170 that was roughlyadjacent to the nitride layer 164. It should be noted, however, that thebottom part of the spacers 170 adjacent to the PADOX 162 was not removedby the nitride strip.

After the etch leveling and nitride strip (block 110), the technique 100may include a damascene process, as indicated by block 112. In oneembodiment, the damascene process may include applying aphotolithographic mask 174 to cover the parts of the semiconductorstructure that will not ultimately be a part of the fin (see FIGS. 11A,11B, and 12), such as the area of the semiconductor structure that willbecome contact pads for either the source and/or drain of thesemiconductor. The damascene process may also include performing anoxide etch (e.g., an oxide punch) to remove the PADOX 162 (where it isnot protected by the mask 174), and then performing a silicon etch tocreate one side of fins 176. For example, as illustrated by FIGS. 11Aand 11B , the spacers 170 and the SOD fill 172, each of which issubstantially unaffected by the silicon etch, will function as a maskduring the silicon etch part of the damascene process. This results inchannels 178 that form one wall of each of the fins 176. The depth ofthe channels 178 (i.e., the depth of the silicon etch) may be adjustedto vary the height of the fins 176. In various embodiments, the heightof the fins 176 may vary between 500A and 2,000A with higher finsexhibiting better isolation between memory cells.

Next, with the photolithographic mask 174 still in place, the technique100 may include performing an STI oxide etch to remove the remainingpart of the spacer 170 and remove the SOD fill 172 to a depth, asindicated by block 114. Typically, the depth of the STI oxide etch willbe roughly approximate to the depth of the channels 178. For example,FIG. 12 illustrates an exemplary semiconductor structure after the STIoxide etch removed the spacers 170 and the SOD fill 172 to the sameapproximate depth as the channels 178. As illustrated in FIG. 12, in oneexemplary embodiment, the STI oxide etch creates one or more double fins176 (i.e., two fins) extending up from the substrate 160. As shown inFIG. 12, each of the fins 176 in the double fin extends upward from anoutcropping 181 of substrate that extends upward from the substrate 160and is partially separated by the SOD 172 from other outcroppings 181from the substrate 160. Similarly, each of the fins 176 within a doublefin pair, while formed from the substrate 160, may extend upward fromone of the outcroppings and be partially separated from the other fin176 in the double fin by the channel 178.

Next, the photolithographic mask 174 may be removed, as indicated byblock 116 of FIG. 4 and illustrated in FIG. 13. Lastly, a gate may beformed as indicated by block 118 and depicted in FIGS. 14A and 14B. Inone embodiment, forming the gate may include depositing silicon and/orpolysilicon 180 between and/or around the fins 176. Because the fins 176are recessed below the original surface of the substrate 160, slightmisalignments between the gate 180 and the fins 176 will notsubstantially affect operation of the fin FET. As described above, inone embodiment, the gate 180 is deposited after the fins 176 have beenfully formed. Lastly, as also illustrated in FIGS. 14A and 14B, a layerof tungsten silicide 182 or other suitable material may be deposited ontop of and/or adjacent to the gate 180 to act as a landing pad forcontext for the fin FET. Moreover, additional contacts 184 for a sourceand/or drain for the FINFET may also be formed during block 118 of FIG.4.

While the invention may be susceptible to various modifications andalternative forms, specific embodiments have been shown by way ofexample in the drawings and have been described in detail herein.However, it should be understood that the invention is not intended tobe limited to the particular forms disclosed. Rather, the invention isto cover all modifications, equivalents, and alternatives falling withinthe spirit and scope of the invention as defined by the followingappended claims.

1. A structure comprising: a substrate having a trench formed therein; afirst outcropping from the substrate partially defined by a first sideof the trench, wherein the first outcropping comprises first finsseparated by a first channel; a second outcropping from the substratepartially defined by a second side of the trench, wherein the secondoutcropping comprises second fins separated by a second channel; firstspacers formed on upper surfaces of the first fins; and second spacersformed on upper surfaces of the second fins, wherein the first spacersand the second spacers are configured to mask the first fins and thesecond fins during an etching process.
 2. The structure, as set forth inclaim 1, wherein the first spacers and the second spacers compriseTetraethyl Orthosilicate Silicone.
 3. The structure, as set forth inclaim 1, wherein the upper surfaces of the first outcropping and thesecond outcropping are recessed below the upper surface of thesubstrate.
 4. The structure, as set forth in claim 1, wherein the firstoutcropping comprises a first double fin field effect transistor, andwherein the second outcropping comprises a second double fin fieldeffect transistor.
 5. A structure comprising: a substrate having anupper surface and thickness; a plurality of double fin structures formedbelow the upper surface and within the thickness of the substrate; and aplurality of trenches formed in the substrate, wherein each of theplurality of trenches is formed between two of the plurality of doublefin structures.
 6. The structure, as set forth in claim 5, wherein eachof the plurality of trenches comprises a depth in the range ofapproximately 2,000-3,000 Angstroms.
 7. The structure, as set forth inclaim 5, wherein each of the double fin structures comprises a firstfin, a second fin and a channel formed therebetween.
 8. The structure,as set forth in claim 7, where the channel comprises a depth in therange of approximately 500-2,000 Angstroms.
 9. The structure, as setforth in claim 7, wherein each of the plurality of trenches is partiallyfilled with a dielectric material.
 10. The structure, as set forth inclaim 9, wherein the dielectric material partially fills each of theplurality of trenches to a height that is approximately equal to a depthof the channel.
 11. The structure, as set forth in claim 9, comprising agate material on top of the dielectric material to completely fill thetrenches.
 12. The structure, as set forth in claim 11, wherein the gatematerial is disposed to fill the channel and disposed on the uppersurface of the substrate.
 13. The structure, as set forth in claim 12,comprising a contact material disposed on the gate material.
 14. Amethod comprising: forming a plurality of parallel walls on top of asubstrate; forming spacers on each side of each of the plurality ofwalls; forming a trench in the substrate between each of the pluralityof walls, such that the spacers define the top of each trench; fillingeach trench with a dielectric material; and removing the walls and aportion of the substrate below the walls, such that channels are formedbetween the spacers and into the substrate.
 15. The method, as set forthin claim 14, wherein filing each trench comprises filing each trenchwith a spin-on dielectric.
 16. The method, as set forth in claim 14,comprising etching the dielectric material in each trench toapproximately the same depth as the channels.
 17. The method, as setforth in claim 16, wherein etching the dielectric material toapproximately the same depth as the channels comprises creating a fin oneach side of each channel.
 18. The method, as set forth in claim 17,wherein creating the fin comprises creating a fin that is recessed belowan upper surface of the substrate.
 19. The method, as set forth in claim18, comprising depositing a gate material onto the fins and filling eachof the channels and the etched portion of each of the trenches with thegate material.
 20. A method comprising: forming a plurality ofoutcroppings below an upper surface of a substrate, wherein each of theplurality of outcropping is separated by a trench; and forming a gate onthe outcroppings.
 21. The method, as set forth in claim 20, whereinforming each of the plurality of outcroppings comprises forming a doublefin structure having two fins separated by a channel.
 22. The method, asset forth in claim 21, wherein forming the gate comprises depositing apolysilicon material on top of each of the fins, into each of thechannels and into a portion of each of the trenches.